Price search results for ON Semiconductor Transistor BJT Discrete MJE13007G TO 220AB No. of channels 1 NPN
Collector current: 8 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 400 V; Collector-emitter saturation voltage...read more
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Collector current: 8 A; Collector cutoff current: 100 µA; Collector emitter voltage U(CEO): 400 V; Collector-emitter saturation voltage (max.): 3 V; DC current gain (hFE): 5; DC current gain hFE - reference current: 5 A; DC current gain hFE - reference voltage: 5 V; Enclosure type (semiconductors): TO 220AB; Manufacturer code (components): OnS; Mounting type: Through-hole; No. of channels: 1; Power (max) P(TOT): 80 W; Series (semiconductors): SWITCHMODE™; Transit frequency f(T): 14 MHz; Type (transistors): NPN