Price search results for Infineon Technologies Transistor BJT Discrete SMBT2907A SOT 23 3 No. of channels 1 PNP Tape cut
Collector current: -600 mA; Collector cutoff current: -10 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation...read more
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Collector current: -600 mA; Collector cutoff current: -10 nA; Collector emitter voltage U(CEO): -60 V; Collector-emitter saturation voltage (max.): -1.6 V; DC current gain (hFE): 100; DC current gain hFE - reference current: -150 mA; DC current gain hFE - reference voltage: -10 V; Enclosure type (semiconductors): SOT 23-3; Manufacturer code (components): INF; Mounting type: Surface-mount; No. of channels: 1; Packaging type (components): Tape cut; Power (max) P(TOT): 330 mW; Transit frequency f(T): 200 MHz; Type (transistors): PNP