Price search results for Infineon Technologies Transistor BJT Discrete BDP950H6327XTSA1 SOT 23 PNP Tape on Full reel
Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type...read more
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Collector current: 0.8 A; Collector emitter voltage U(CEO): 32 V; DC current gain hFE - reference current: 250 µA; Enclosure type (semiconductors): SOT 23; Mounting type: Surface-mount; Packaging type (components): Tape on Full reel; Power (max) P(TOT): 0.33 W; Transit frequency f(T): 0.2 GHz; Type (transistors): PNP