Price search results for Infineon Technologies IRLD024PBF MOSFET 1 N channel 1.3 W HEXDIP
C(ISS): 870 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): HEXDIP; I(d): 2.5 A;...read more
Subscribe
C(ISS): 870 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 60 V; Enclosure type (semiconductors): HEXDIP; I(d): 2.5 A; Manufacturer code (components): VIS; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 1.3 W; Q(G): 18 nC; Q(G) reference voltage: 5 V; R(DS)(on): 100 mΩ; R(DS)(on) reference current: 1.5 A; R(DS)(on) reference voltage: 5 V; Transistor property: Logic level gate; Type (transistors): N-channel ; U(DSS): 60 V; U(GS)(th) max.: 2 V; U(GS)(th) reference current (max.): 250 µA