Price search results for Infineon Technologies IRFP260NPBF MOSFET 1 N channel 300 W TO 247 3
C(ISS): 4057 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 247 3; I(d): 50...read more
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C(ISS): 4057 pF; C(ISS) reference voltage: 25 V; Cut-off voltage U(DSS): 200 V; Enclosure type (semiconductors): TO 247 3; I(d): 50 A; Manufacturer code (components): INF; Mounting type: Through-hole; No. of channels: 1; Operating temperature (max.): +175 °C; Operating temperature (min.) (num): -55 °C; Power (max) P(TOT): 300 W; Q(G): 234 nC; Q(G) reference voltage: 10 V; R(DS)(on): 40 mΩ; R(DS)(on) reference current: 28 A; R(DS)(on) reference voltage: 10 V; Series (semiconductors): HEXFET®; Transistor property: Standard; Type (transistors): N-channel ; U(DSS): 200 V; U(GS)(th) max.: 4 V; U(GS)(th) reference current (max.): 250 µA