Price search results for Infineon Technologies IKW15N120H3FKSA1 IGBT TO 247 1200 V Tube
Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 60 A.; Collector...read more
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Additional technical information: (UGE(th)) Gate emitter threshold voltage 5.8 V; (ICpulse) Pulsed collector current: 60 A.; Collector current: 30 A; Collector emitter reverse voltage U(CES): 1200 V; Enclosure type (semiconductors): TO 247; Mounting type: Through-hole; Off delay t(d)(off)(2): 260 ns; On delay (t(d)(on): 21 ns; Packaging type (components): Tube