Price search results for Diotec Transistor BJT Discrete BCP55 6 SOT 223 NPN
Collector current: 1000 mA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 500 mV; DC current...read more
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Collector current: 1000 mA; Collector emitter voltage U(CEO): 60 V; Collector-emitter saturation voltage (max.): 500 mV; DC current gain (hFE): 40; Enclosure type (semiconductors): SOT 223; Mounting type: Surface-mount; Power (max) P(TOT): 2 W; Transit frequency f(T): 100 MHz; Type (transistors): NPN